C5387 Transistor

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100.00Br

Highlights

  • Type Designator: C5387
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 50 W
  • Maximum Collector-Base Voltage |Vcb|: 1500 V
  • Maximum Collector-Emitter Voltage |Vce|: 600 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 10 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 1.7 MHz
  • Collector Capacitance (Cc): 130 pF
  • Forward Current Transfer Ratio (hFE), MIN: 4.3
  • Noise Figure, dB: –

Description

  • C5387 NPN transistor