FGH60N60 IGBT

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300.00Br

Highlights

  • FGH60N60 IGBT
  • Product Category: IGBT Transistors
  • RoHS: RoHS Compliant Details
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 600 V
  • Maximum Gate Emitter Voltage: /- 20 V
  • Continuous Collector Current at 25 C: 120 A
  • Mounting Style: Through Hole
  • Maximum Operating Temperature: 150 C
  • Minimum Operating Temperature: – 55 C

Description

  • FGH60N60 IC 60N60 IGBT 600V 8A TO-247 IGBT Switching Power N Channel
  • FGH60N60SFD is an insulated gate bipolar transistor (IGBT), a semiconductor device that has field effect signal characteristics with high current and low saturation voltage capability. This transistor has a 3-pin TO-247 package, supporting a collector-emitter VCEO voltage of up to 600V.
  • It is used as a switch to control power electronic circuits to have good optical performance for UPS, SMPS and PFC induction heating applications where low conduction and switching losses are essential. It is commonly implemented in applications of:
    • Solar inverters
    • UPS
    • Soldering irons and PFCs where low switching and conduction losses are essential.

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