Power MOSFET

50.00 Br

N-Channel MOSFET

  • IRFZ44N
  • IRFZ740
  • IRF3205
  • IRF540
  • 2N7000

P- Channel MOSFET

  • IRF9540

N-Channel MOSFET

IRFZ44N

  • Continuous Drain Current (ID) is 49A at 25°C
  • Pulsed Drain Current (ID-peak) is 160A
  • Minimum Gate threshold voltage (VGS-th) is 2V
  • Maximum Gate threshold voltage (VGS-th) is 4V
  • Gate-Source Voltage is (VGS) is ±20V (max)
  • Maximum Drain-Source Voltage (VDS) is 55V
  • Rise time and fall time is about 60ns and 45ns respectively.
  • It is commonly used with Arduino, due to its low threshold current.

IRFZ740

  • Continuous Drain Current (ID): 10A
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage: 400V
  • Drain Source Resistance (RDS) is 0.55 Ohms
  • Rise time and fall time is 27nS and 24nS

IRF3205

  • Continuous Drain Current (ID) is 110A when VGS is 10V
  • Minimum Gate threshold voltage 2V
  • Drain to Source Breakdown Voltage: 55V
  • Low On-Resistance of 8.0mΩ
  • Gate-Source Voltage is (VGS) is ±20V
  • Rise time is 101ns
  • It is commonly used with Power Switching circuits

IRF540

  • Continuous Drain Current (ID) is 33A at 25°C
  • Pulsed Drain Current (ID-peak) is 110A
  • Minimum Gate threshold voltage (VGS-th) is 2V
  • Maximum Gate threshold voltage (VGS-th) is 4V
  • Gate-Source Voltage is (VGS) is ±20V
  • Maximum Drain-Source Voltage (VDS) is 100V
  • Turn ON and Turn off time is 35ns each’
  • It is commonly used with Arduino, due to its low threshold current.

2N7000

  • Transistor Type: N Channel
  • Max Voltage Applied From Drain to Source: 60V
  • Max Gate to Source Voltage Should Be: ±20V
  • Max Continues Drain Current is : 200mA
  • Max Pulsed Drain Current is: 500mA
  • Max Power Dissipation is: 400mW
  • Minimum Voltage Required to Conduct: 8V
  • Max Storage & Operating temperature Should Be: -55 to +150 Celsius

P- Channel MOSFET

IRF9540

  • Maximum Power Dissipation (Pd): 150 W
  • Maximum Drain-Source Voltage |Vds|: 100 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 19 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 61 nC
  • Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

 

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