Transistor H1061

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80.00Br

Highlights

  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 40 W
  • Maximum Collector-Base Voltage |Vcb|: 100 V
  • Maximum Collector-Emitter Voltage |Vce|: 80 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 4 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 10 MHz
  • Collector Capacitance (Cc): 40 pF
  • Forward Current Transfer Ratio (hFE), MIN: 60
  • Noise Figure, dB: –
  • Package: TO220AB

Description

  • H1061 Transistor