Transistor MJE3055T

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80.00Br

Highlights

  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation (Pc): 75 W
  • Maximum Collector-Base Voltage |Vcb|: 70 V
  • Maximum Collector-Emitter Voltage |Vce|: 60 V
  • Maximum Emitter-Base Voltage |Veb|: 5 V
  • Maximum Collector Current |Ic max|: 10 A
  • Max. Operating Junction Temperature (Tj): 150 °C
  • Transition Frequency (ft): 2 MHz
  • Forward Current Transfer Ratio (hFE), MIN: 20

Description

  • These devices are designed for use in general-purpose amplifier and switching applications