IRF840 MOSFET

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80.00Br

Highlights

  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 8A
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage: 500V
  • Drain Source Resistance (RDS) is 0.85 Ohms
  • Rise time and fall time is 23nS and 20nS
  • Available in To-220 package

Description

  • IRF840 N-Channel Power Mosfet
  • The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. The Mosfet could switch loads that consume upto 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin.
  • Alternatives for IRF840 8N50, FTK480, KF12N50
  • The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. The Mosfet could switch loads that consume upto 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.
  • One considerable disadvantage of the IRF840 Mosfet is its high on-resistance (RDS) value which is about 0.85 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.

Applications

    • Switching high power devices
    • Inverter Circuits
    • DC-DC Converters
    • Control speed of motors
    • LED dimmers or flashers
    • High Speed switching applications
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