Power MOSFET

N-Channel MOSFET

IRFZ44N

• Continuous Drain Current (ID) is 49A at 25°C
• Pulsed Drain Current (ID-peak) is 160A
• Minimum Gate threshold voltage (VGS-th) is 2V
• Maximum Gate threshold voltage (VGS-th) is 4V
• Gate-Source Voltage is (VGS) is ±20V (max)
• Maximum Drain-Source Voltage (VDS) is 55V
• Rise time and fall time is about 60ns and 45ns respectively.
• It is commonly used with Arduino, due to its low threshold current.

IRFZ740

• Continuous Drain Current (ID): 10A
• Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
• Drain to Source Breakdown Voltage: 400V
• Drain Source Resistance (RDS) is 0.55 Ohms
• Rise time and fall time is 27nS and 24nS

IRF3205

• Continuous Drain Current (ID) is 110A when VGS is 10V
• Minimum Gate threshold voltage 2V
• Drain to Source Breakdown Voltage: 55V
• Low On-Resistance of 8.0mΩ
• Gate-Source Voltage is (VGS) is ±20V
• Rise time is 101ns
• It is commonly used with Power Switching circuits

IRF540

• Continuous Drain Current (I_D) is 33A at 25°C
• Pulsed Drain Current (I_D-peak) is 110A
• Minimum Gate threshold voltage (V_GS-th) is 2V
• Maximum Gate threshold voltage (V_GS-th) is 4V
• Gate-Source Voltage is (V_GS) is ±20V
• Maximum Drain-Source Voltage (V_DS) is 100V
• Turn ON and Turn off time is 35ns each’
• It is commonly used with Arduino, due to its low threshold current.

2N7000

• Transistor Type: N Channel
• Max Voltage Applied From Drain to Source: 60V
• Max Gate to Source Voltage Should Be: ±20V
• Max Continues Drain Current is : 200mA
• Max Pulsed Drain Current is: 500mA
• Max Power Dissipation is: 400mW
• Minimum Voltage Required to Conduct: 8V
• Max Storage & Operating temperature Should Be: -55 to 150 Celsius

P- Channel MOSFET

IRF9540

• Maximum Power Dissipation (Pd): 150 W
• Maximum Drain-Source Voltage |Vds|: 100 V
• Maximum Gate-Source Voltage |Vgs|: 20 V
• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
• Maximum Drain Current |Id|: 19 A
• Maximum Junction Temperature (Tj): 175 °C
• Total Gate Charge (Qg): 61 nC
• Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm