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FGH40N60 IGBT
Br 350.00
- FGH40N60 IGBT
- Product Category: IGBT Transistors
- Configuration: Single
- Low Saturation Voltage: VCE(sat) = 2.3V @ IC = 40A
- Type: NPN
- Collector to Emitter Voltage: 600V
- Gate to Emitter Voltage: 20V
- Transient Gate−to−Emitter Voltage: 30V
- Continuous Collector Current at 25C: 120 A
- Power Dissipation: 160W-290W
- Mounting Style: Through Hole
- Maximum Operating Temperature: 150C
- Minimum Operating Temperature: –55C
- The FGH40N60 is an insulated gate bipolar transistor (IGBT) designed for high-power and high-frequency applications, such as motor drives, power supplies, and solar inverters.�It is a robust electronic switch that can handle a maximum voltage of 600V and a continuous collector current of 40A.
- High Current Capability
- High Input Impedance
- Fast Switching
- Qualified to Automotive Requirements of AEC−Q101
Applications
- Automotive Chargers, Converters, High Voltage Auxiliaries
- Inverters, PFC, UPS
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