IGBT 40N60

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300.00Br

Highlights

  • FGH40N60 IGBT
  • Product Category: IGBT Transistors
  • Configuration: Single
  • Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
  • Type: NPN
  • Collector to Emitter Voltage: 600V
  • Gate to Emitter Voltage: 20V
  • Transient Gate−to−Emitter Voltage: 30V
  • Continuous Collector Current at 25C: 120 A
  • Power Dissipation: 160W-290W
  • Mounting Style: Through Hole
  • Maximum Operating Temperature: 150C
  • Minimum Operating Temperature: –55C

Description

  • High Current Capability
  • High Input Impedance
  • Fast Switching
  • Qualified to Automotive Requirements of AEC−Q101

Applications

  • Automotive Chargers, Converters, High Voltage Auxiliaries
  • Inverters, PFC, UPS
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