2N5401 PNP Transistor

Br 15.00

2N5401 PNP Transistor
High collector breakdown voltage
With DC Current Gain (hFE) up to 100
Maximum voltage across collector and emitter: 150V
Maximum current allowed trough collector: 600mA
Maximum voltage across collector and base: 160 V
Maximum voltage across base and emitter: 5V
Operating temperature range: -55ºC to +150ºC
Maximum power dissipation : 0.62 W
2N5401 is specifically designed to be used in high voltage applications where load consumes very less power (i.e. Current drawn by load is low). These types of circuits can be seen in telephone systems. It can also be used when you want a simple switching device for high voltage loads. Also the component is cheap and easy to work with.

2N5401 PNP Transistor
2N5401 is a PNP transistor designed specifically for high voltage – low power switching applications and amplifications.
The NPN complementary for the device is 2N5551
Similar Transistors2N5551 (NPN), MPSA92, MPSA93, BF723, 2N5096