2N5401 PNP Transistor

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15.00Br

Highlights

  • 2N5401 PNP Transistor
  • High collector breakdown voltage
  • With  DC Current Gain (hFE) up to 100
  • Maximum voltage across collector and emitter: 150V
  • Maximum current allowed trough collector: 600mA
  • Maximum voltage across collector and base: 160 V
  • Maximum voltage across base and emitter: 5V
  • Operating temperature range: -55ºC to +150ºC
  • Maximum power dissipation : 0.62 W
  • 2N5401 is specifically designed to be used in high voltage applications where load consumes very less power (i.e. Current drawn by load is low). These types of circuits can be seen in telephone systems. It can also be used when you want a simple switching device for high voltage loads. Also the component is cheap and easy to work with.

Description

  • 2N5401 PNP Transistor
  • 2N5401 is a PNP transistor designed specifically for high voltage – low power switching applications and amplifications.
  • The NPN complementary for the device is 2N5551
  • Similar Transistors 2N5551 (NPN), MPSA92, MPSA93, BF723, 2N5096

Applications

  • General purpose switching and amplification2n
  • Telephony applications
  • High voltage application
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