1200 V, 40 A PIM three phase input rectifier IGBT module
Maximum collector-emitter voltage of 1200V
Maximum collector current of 40A
Maximum junction temperature of 150°C
Maximum switching frequency of 20kHz
IGBT transistor (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor)
The saturation voltage of GTR is reduced, the current-carrying density is high, but the driving current is large; the MOSFET driving power is small, the switching speed is fast, but the conduction voltage drop is large, and the current-carrying density is small. IGBT combines the advantages of the above two devices, with low driving power and reduced saturation voltage.
It is very suitable for application in the fields of AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields with a DC voltage of 600V and above.
IGBT is a natural evolution of vertical power MOSFETs used in high current, high voltage applications and fast terminal equipment. Since the realization of a higher breakdown voltage BVDSS requires a source-drain channel, and this channel has a high resistivity, the power MOSFET has the characteristic of high RDS(on) value. The IGBT eliminates these features of the existing power MOSFET.
Although the latest generation of power MOSFET devices have greatly improved RDS(on) characteristics, at high levels, the power conduction loss is still much higher than that of IGBT technology. The lower voltage drop, the ability to convert into a low VCE (sat), and the structure of the IGBT, compared with a standard bipolar device, can support higher current density and simplify the schematic diagram of the IGBT driver.
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