Transistor H1061

Br 100.00

H1061 triple diffused silicon NPN Transistor designed for low frequency power amplifier
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40W
Maximum Collector-Base Voltage |Vcb|: 100V
Maximum Collector-Emitter Voltage |Vce|: 80V
Maximum Emitter-Base Voltage |Veb|: 5V
Maximum Collector Current |Ic max|: 4A
Max. Operating Junction Temperature (Tj): 150°C
Transition Frequency (ft): 10MHz
Collector Capacitance (Cc): 40pF
Forward Current Transfer Ratio (hFE), MIN: 60