Name: TRANSISTOR 2N3055
SKU: 8425
Price: 200.00 ETB
Availability: InStock

TRANSISTOR 2N3055

Br 200.00

It is a 60V and 15A device which comes with a base current of 7A and forward current gain ranges between 20 to 70.
Medium power transistor
Excellent safe operating area
Low collector-emitter saturation voltage
DC current gain (hFE) up to 70
With hfe improved linearity
Maximum voltage across collector and emitter: 60V DC
Maximum current allowed trough collector: 15A
Maximum voltage across base and emitter: 7V DC
Maximum current allowed through base: 7A
Maximum voltage across collector and base: 100V DC
Operating temperature range: -65ºC to +200ºC
Total power dissipation: 115W

2N3055�is a general purpose NPN(negative-positive-negative) power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case. The device is designed for general purpose switching and amplifier applications.
Unlike FETs(Field effect transistors) it is a current controlled device in which small current at the base side is used to control a large amount of current at the emitter and collector side.
This transistor is a bipolar current controlled device which is different than JFET which is a unipolar voltage controlled device.
15A, 60V, 115W EPIBASE
2N3055 is also used in audio power amplifiers. The device has good amplifying factor and also the gain is almost linear making 2N3055 one of best solution for power amplifiers.

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