Name: IGBT FGA40N120
SKU: 13882
Price: 450.00 ETB
Availability: InStock

IGBT FGA40N120

Br 450.00

The FGL40N120 is a high-performance 1200V 40A N- channel NPT (Non-Punch Through) Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It features low conduction/switching losses, short-circuit capability, and is commonly used in welding machines, UPS, motor control, and induction heating.
Model: FGL40N120AN
Maximum Power Dissipation: 500W
Maximum Collector-Emitter Voltage: 1200V
Maximum Gate-Emitter Voltage: 25V
Maximum Collector Current: 64A @25℃
Maximum Junction Temperature: 150℃
Collector-Emitter saturation Voltage, typ: 2.6 V @25℃
Maximum G-E Threshold Voltag: 7.5 V
Rise Time, typ: 20 nS
Output Capacitance, typ: 370 pF
Total Gate Charge, typ: 25 nC

The FGL40N120 (often specifically the FGL40N120AND) is a high-performance, 1200V N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. It is rated for a 40A collector current featuring low saturation voltage and high-speed switching, making it ideal for induction heating, UPS, and motor control
The NPT technology used in the FGL40N120 series offers improved reliability, higher ruggedness, and reduced, stable, low switching/conduction losses under high-temperature conditions.

Applications