BF495 NPN Transistor

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15.00Br

Highlights

  • BF495 is an NPN silicon medium-frequency transistor
  • Collector to emitter voltage (VCE) is 20V
  • Collector to base voltage (VCB) is 30V
  • Emitter to base voltage (VEB) is 5V
  • Collector current is 30mA
  • Pulsed collector current is 30mA
  • Power dissipation is 300W
  • DC current gain is 35 to 125hFE
  • Junction temperature is between -65 to 150℃
  • Thermal resistance is between, junction to ambient 420℃/W
  • Transition frequency is 120MHz
  • Low current
  • Low voltage

Description

  • BF495 Transistor
  • The transition frequency value of the BF495 transistor is 120MHz, this value had importance at the circuit level.
  • It is a medium frequency transistor designed to use in RF and radio applications. The maximum collector current of the transistor is 30mA which means the transistor can drive maximum load of 30mA, the maximum collector to emitter voltage is 20V which means it can drive load voltage of upto 20V. The total power dissipation of the transistor 300milliwatts, the transition frequency of the transistor is 120MHz and the DC current gain of the transistor is 35 to 125.
  • Replacement and Equivalent: BF494, 2N9018, C3355, BF199

Applications:

  • Audio Premamplifier Circuits
  • Audio Amplifier Circuits
  • FM Radios
  • FM Senders
  • Any general purposes switching and amplification
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