S8050 NPN Transistor

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15.00Br

Highlights

  • Low Voltage, High Current NPN Transistor
  • Small Signal Transistor
  • Maximum Power: 2 Watts
  • Maximum DC Current Gain (hFE) is 400
  • Continuous Collector current (IC) is 700mA
  • Base- Emitter Voltage (VBE) is 5V
  • Collector-Emitter Voltage (VCE) is 20V
  • Collector-Base Voltage (VCB) is 30V
  • High Used in push-pull configuration doe Class B amplifiers

Description

  • S8050 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. It has a maximum gain value of 400; this value determines the amplification capacity of the transistor normally S8050. Since it is very high it is normally used for amplification purposes. However at a normal operating collector current the typical value of gain will be 110. The maximum amount of current that could flow through the Collector pin is 700mA, hence we cannot drive loads that consume more than 700mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA.
  • When this transistor is fully biased then it can allow a maximum of 700mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (V­CE) or Collector-Base (VCB) could be 20V and 30V respectively. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region.

Applications

  • Audio Amplification Circuits
  • Class B Amplifiers
  • Push pull Transistors
  • Circuits where high gain is required
  • Low signal applications
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