Transistor BD139

50.00 Br

  • Transistor Type: NPN
  • Max Collector Current(IC): 1.5A
  • Max Collector-Emitter Voltage (VCE): 80V
  • Max Collector-Base Voltage (VCB): 80V
  • Max Emitter-Base Voltage (VEBO): 5V
  • Max Collector Dissipation (Pc): 12.5 Watt
  • Max Transition Frequency (fT): 190 MHz
  • Minimum & Maximum DC Current Gain (hFE): 25 – 250
  • Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
  • BD139 – Medium Power NPN Transistor
  • Plastic casing NPN Transistor
  • Continuous Collector current (IC) is 1.5A
  • Collector-Emitter voltage (VCE) is 80 V
  • Collector-Base voltage (VCB) is 80V
  • Emitter Base Breakdown Voltage (VBE) is 5V
  • DC current gain (hfe) is 40 to 160
  • BD139 is a popular NPN transistor used in wide variety of electronic circuits, due to its high collector current and low cost it is an ideal transistor to be used in educational electronic projects and also in commercial electronics. It can drive loads upto 1.5A which is a good feature due to which you can drive many high current components such as high power LEDs, high current relays, motors etc. The collector emitter and collector base voltage is also very high therefore it can easily survive in an electronic circuit that is operated under 80 volts. The collector dissipation is 12.5W due to which it is also ideal to use it in audio amplifier circuits. The saturation voltage of the transistor is just 0.5V.

Applications

  • RF Amplifiers
  • Switching circuits
  • Amplification circuits
  • Audio amplifiers
  • Load driver circuits

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