Bipolar Junction Transistor
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S8550 Transistor
15.00Br- S8550 PNP Transistor
- Low Voltage, High Current PNP Transistor
- Continuous Collector current (IC) is 500mA
- Collector-Emitter voltage (VCEO) is -25 V
- Collector-Base voltage (VCB0) is -40V
- Emitter Base Voltage (VBE0) is -5V
- Current Gain (hFE), 85 to 300
- Commonly used as Class B Push-pull transistors
- S8550 Equivalent Transistor BC527, KSA708, MPS750
- Alternative PNP Transistors BC557, 2N3906, A1015, 2SA1943, BD140
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S9015 PNP Transistor
15.00Br- S9015 PNP Transistor
- Transistor Type: PNP
- Max Collector Current(IC): –100mA
- Max Collector-Emitter Voltage (VCE): –45V
- Max Collector-Base Voltage (VCB): –50V
- Max Emitter-Base Voltage (VEBO): –5V
- Max Collector Dissipation (Pc): 400 miliWatt
- Max Transition Frequency (fT): 150 MHz
- Minimum & Maximum DC Current Gain (hFE): 60 – 1000
- NPN Complementary of S9015 is S9014
- Max Storage & Operating temperature Should Be: -55 to +150 Centigrade
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S9012 PNP Transistor
15.00Br- S9012 PNP Small Signal Transistor
- Transistor Type: PNP
- Max Collector Current(IC): -500mA
- Max Collector-Emitter Voltage (VCE): -20V
- Max Collector-Base Voltage (VCB): -40V
- Max Emitter-Base Voltage (VBE): -5V
- Max Collector Dissipation (Pc): 625 Milliwatt
- Max Transition Frequency (fT): 100 MHz
- Minimum & Maximum DC Current Gain (hFE): 64 to 202
- Max Storage & Operating temperature Should be: -65 to +150Centigrade
- NPN Complementary of S9012 is S9013
